Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

摘要: Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as result charge trapping the nanoparticles/nanoclusters embedded matrix. For metal-insulator-semiconductor structure with 60nm voltage −15V applied to metal electrode for 10−6s causes flatband shift ∼1.5V. Both electron hole are possible, depending on polarity voltage. In addition, whether or dominant process also depends charging time magnitude The films provide possibility applications low cost.