Anomalous capacitance-voltage characteristics of Al/Al-rich Al2O3/p-Si capacitors and their reconstruction
作者： Z. Liu , T. P. Chen , Y. Liu , M. Yang , J. I. Wong
DOI: 10.1063/1.3156028
关键词:
摘要: Anomalous capacitance-voltage (C-V) characteristics of Al/Al-rich Al2O3/p-Si capacitors have been observed. The measured C-V curves exhibit rolloffs and frequency dispersion in the accumulation region voltage stresses cause both horizontal vertical shifts curves. These anomalous behaviors are mainly due to large current conduction charge trapping Al-rich Al2O3 layer. reconstructed based on a four-element circuit model. With curves, capacitance layer charging-induced flatband shift can be determined.
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