Temperature dependence of current transport in Al/Al2O3 nanocomposite thin films
作者： Y. Liu , T. P. Chen , L. Ding , M. Yang , Z. Liu
DOI: 10.1063/1.3663313
关键词: Quantum tunnelling 、 Sputter deposition 、 Thermoelectric effect 、 Nanotechnology 、 Condensed matter physics 、 Nanolithography 、 Silicon 、 Current (fluid) 、 Materials science 、 Thin film 、 Nanocomposite
摘要: In this work, Al/Al2O3 nanocomposite thin film is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. It found that the current conduction at low fields greatly enhanced with temperature. The increase can be attributed decrease in tunneling resistance and/or formation of some paths due release measurement-induced charges trapped as result evolves trend toward three-dimensional transport temperature increases.
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