Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with Al2O3 gate dielectric
作者： Jae Bon Koo , Chan Hoe Ku , Sang Chul Lim , Seong Hyun Kim , Jung Hun Lee
DOI: 10.1063/1.2717015
关键词:
摘要: The pentacene organic thin-film transistors (OTFTs) with plasma-enhanced atomic-layer-deposited 150nm thick Al2O3 as a gate dielectric and the inverters comprised of these OTFTs have been fabricated. hysteresis in transfer characteristics depends on scan range negative voltage, regardless drain voltage. Negative gate-bias stress leads to progressive shift threshold D inverter is similar that E inverter, but former has wider swing higher gain comparison latter.
scitation.org
harvard.edu
etri.re.kr
aip.org参考文章(18)
Th. B. Singh, N. Marjanović, G. J. Matt, N. S. Sariciftci, R. Schwödiauer, S. Bauer, Nonvolatile organic field-effect transistor memory element with a polymeric gate electret Applied Physics Letters. ,vol. 85, pp. 5409- 5411 ,(2004) , 10.1063/1.1828236
Stijn De Vusser, Soeren Steudel, Kris Myny, Jan Genoe, Paul Heremans, Low voltage complementary organic inverters Applied Physics Letters. ,vol. 88, pp. 162116- ,(2006) , 10.1063/1.2197604
A. Salleo, R. A. Street, Kinetics of bias stress and bipolaron formation in polythiophene Physical Review B. ,vol. 70, pp. 235324- ,(2004) , 10.1103/PHYSREVB.70.235324
A. Salleo, M. L. Chabinyc, M. S. Yang, R. A. Street, Polymer thin-film transistors with chemically modified dielectric interfaces Applied Physics Letters. ,vol. 81, pp. 4383- 4385 ,(2002) , 10.1063/1.1527691
Lay-Lay Chua, Jana Zaumseil, Jui-Fen Chang, Eric C.-W. Ou, Peter K.-H. Ho, Henning Sirringhaus, Richard H. Friend, General observation of n-type field-effect behaviour in organic semiconductors Nature. ,vol. 434, pp. 194- 199 ,(2005) , 10.1038/NATURE03376
R. A. Street, A. Salleo, M. L. Chabinyc, Bipolaron mechanism for bias-stress effects in polymer transistors Physical Review B. ,vol. 68, pp. 085316- ,(2003) , 10.1103/PHYSREVB.68.085316
Woong Kim, Ali Javey, Ophir Vermesh, Qian Wang, Yiming Li, Hongjie Dai, Hysteresis caused by water molecules in carbon nanotube field-effect transistors Nano Letters. ,vol. 3, pp. 193- 198 ,(2003) , 10.1021/NL0259232
R. Schroeder, L. A. Majewski, M. Grell, All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator Advanced Materials. ,vol. 16, pp. 633- 636 ,(2004) , 10.1002/ADMA.200306187
Jae Bon Koo, Sun Jin Yun, Jung Wook Lim, Seong Hyun Kim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Taehyoung Zyung, Low-voltage and high-gain pentacene inverters with plasma-enhanced atomic-layer-deposited gate dielectrics Applied Physics Letters. ,vol. 89, pp. 033511- ,(2006) , 10.1063/1.2234835
Guangming Wang, Daniel Moses, Alan J. Heeger, Hong-Mei Zhang, Mux Narasimhan, R. E. Demaray, Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator Journal of Applied Physics. ,vol. 95, pp. 316- 322 ,(2004) , 10.1063/1.1630693