Reduction of Electrical Hysteresis in Cyclically Bent Organic Field Effect Transistors by Incorporating Multistack Hybrid Gate Dielectrics
作者： Y. G. Seol , J. S. Park , N. T. Tien , N.-E. Lee , D. K. Lee
DOI: 10.1149/1.3489944
关键词:
摘要: We have fabricated flexible organic field effect transistors (OFETs) on polyimide substrate with low hysteresis and low leakage current under repetitive bending. The insertion of an …
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