Leakage current mechanisms in high performance alumina-silicone nanolaminate dielectrics
作者： S. K. Sahoo , R. P. Patel , C. A. Wolden
DOI: 10.1063/1.4756788
关键词:
摘要: Alumina-silicone nanolaminates deposited by plasma-enhanced chemical vapor deposition were explored as dielectrics in metal-insulator-metal capacitors. Temperature-dependent current versus voltage (I-V) measurements used to investigate the conduction mechanisms contributing leakage these structures. It is observed that space charge limited mechanism dominant process high field region. The estimated shallow trap level energies (Et) are 0.16 eV and 0.33 eV for 50% 83.3% Al2O3 nanolaminates, respectively.
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