Field Dependent Electrical Conduction in Metal-Insulator-Metal Devices using Alumina-Silicone Nanolaminate Dielectrics
作者： Santosh K. Sahoo , Rakhi P. Patel , Colin A. Wolden
DOI: 10.1557/OPL.2013.782
关键词:
摘要: Hybrid alumina-silicone nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics application such capacitors in thin film transistors memory devices. In this work, we present the dependent current versus voltage (I-V) measurements of range 200- 310 K to better asses their potential these applications. Various models used know different conduction mechanisms contributing leakage films. It is observed that space charge limited (SCLC) mechanism dominant process high field region whereas Ohmic region. The shallow electron trap level energy (E t ) 0.16 eV responsible SCLC activation a electrons about 0.22 eV. An band diagram given explain dominance various regions
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