Transport mechanism in aluminum nitride-metal multilayer junctions
作者： A. Kabulski , D. Korakakis
DOI: 10.1116/1.3258658
关键词:
摘要: The electrical behavior of aluminum nitride (AlN) thin film structures consisting alternating AlN and platinum (Pt) layers has been studied. Typical single layer films are insulating due to the wide bandgap properties material, but stacked AlN–Pt can be conductive. Conductivity studies indicate regions semiconductor as well where tunneling occurs. thickness layers, number interfaces in structures, is found impact conduction mechanism. Fowler–Nordheim theory plots were used determine trends it was that field enhancement factor depends on total while mechanism, tunneling, or multistep hopping between midbandgap states, well.
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