Electrical Properties of MIS Capacitors with AlN Films Synthesized by Pulsed Laser Deposition
作者： Silvia Bakalova , Simeon Simeonov , Elisaveta Kafedjiiska , Anna Szekeres , Sorin Grigorescu
关键词: Pulsed laser deposition 、 Aluminium nitride 、 Thin film 、 Electrical measurements 、 Nitrogen 、 Ablation 、 Materials science 、 Optoelectronics 、 Capacitor 、 Electronic engineering 、 Dielectric
摘要: We manufactured for the first time MIS capacitors based on aluminium nitride (AlN) thin films synthesized by Pulsed Laser Deposition (PLD). AlN were deposited Si substrates PLD from targets in nitrogen ambient multi-pulse ablation using a UV KrF excimer laser source (λ = 248 nm, τ 7 ns). The structures we prepared electrically characterized C-V and I-V complementary measurements. Our studies evidence formation of good interfaces, defects into film bulk which are active. This justifies further developments view future applications as dielectric alternatives to SiO 2 .
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