Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism
作者： Yiren Chen , Hang Song , Hong Jiang , Zhiming Li , Zhiwei Zhang
DOI: 10.1063/1.4901747
关键词:
摘要: Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed the nitrogen vacancies of AlN serving as electron traps that form/rupture transport channel by trapping/detrapping electrons. This study will lead development in-situ growth group-III nitrides metal-organic chemical vapor deposition a candidate for next-generation nonvolatile memory device. Moreover, it benefit structure monolithic integrated one-transistor-one-resistor with high mobility transistors.
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