Nonvolatile conductive filaments resistive switching behaviors in Ag/GaOx/Nb:SrTiO3/Ag structure
作者： PG Li , YS Zhi , PC Wang , ZB Sun , LH Li
DOI: 10.1007/S00339-016-0200-Y
关键词:
摘要: Ag/GaOx/NSTO/Ag structures were fabricated, and the electrical properties measurement results show that device behaviors a unipolar resistance switching characteristic with bi-stable ratio of three orders. In positive voltage region, dominant conducting mechanism high state obeys Poole–Frenkel emission rules, while in negative space-charge-limited current mechanism. Both I–V curves ON OFF states temperature-dependent variation resistances indicate behavior can be explained by formation/rupture conductive filaments, which composed oxygen vacancies. The stable demonstrated structure applied random access memory devices.
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