Resistive Switching in p-Type Nickel Oxide/n-Type Indium Gallium Zinc Oxide Thin Film Heterojunction Structure

作者: H. K. Li , T. P. Chen , S. G. Hu , W. L. Lee , Y. Liu

DOI: 10.1149/2.0331609JSS

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参考文章(29)
Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai, Chun-An Lin, Kung-Hwa Wei, Tseung-Yuen Tseng, Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming Applied Physics Letters. ,vol. 107, pp. 033505- ,(2015) , 10.1063/1.4927284
H. J. Zhang, X. P. Zhang, J. P. Shi, H. F. Tian, Y. G. Zhao, Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions Applied Physics Letters. ,vol. 94, pp. 092111- ,(2009) , 10.1063/1.3095493
Rui Zhang, Tai-Fa Young, Min-Chen Chen, Hsin-Lu Chen, Shu-Ping Liang, Yong-En Syu, Simon M. Sze, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Syuan-Yong Huang, Wen-Jen Chen, Kai-Huang Chen, Jen-Chung Lou, Jung-Hui Chen, Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory IEEE Electron Device Letters. ,vol. 35, pp. 630- 632 ,(2014) , 10.1109/LED.2014.2316806
Moon-Seok Kim, Young Hwan Hwang, Sungho Kim, Zheng Guo, Dong-Il Moon, Ji-Min Choi, Myeong-Lok Seol, Byeong-Soo Bae, Yang-Kyu Choi, Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory Applied Physics Letters. ,vol. 101, pp. 243503- ,(2012) , 10.1063/1.4770073
Xinman Chen, Hong Zhou, Guangheng Wu, Dinghua Bao, Colossal resistive switching behavior and its physical mechanism of Pt/p-NiO/n-Mg0.6Zn0.4O/Pt thin films Applied Physics A. ,vol. 104, pp. 477- 481 ,(2011) , 10.1007/S00339-011-6290-7
T. L. Qu, Y. G. Zhao, D. Xie, J. P. Shi, Q. P. Chen, T. L. Ren, Resistance switching and white-light photovoltaic effects in BiFeO3/Nb–SrTiO3 heterojunctions Applied Physics Letters. ,vol. 98, pp. 173507- ,(2011) , 10.1063/1.3584031
Inrok Hwang, Myung-Jae Lee, Gyoung-Ho Buh, Jieun Bae, Jinsik Choi, Jin-Soo Kim, Sahwan Hong, Yeon Soo Kim, Ik-Su Byun, Seung-Woong Lee, Seung-Eon Ahn, Bo Soo Kang, Sung-Oong Kang, Bae Ho Park, Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure Applied Physics Letters. ,vol. 97, pp. 052106- ,(2010) , 10.1063/1.3477953
DY Guo, ZP Wu, YH An, PG Li, PC Wang, XL Chu, XC Guo, YS Zhi, M Lei, LH Li, WH Tang, None, Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications Applied Physics Letters. ,vol. 106, pp. 042105- ,(2015) , 10.1063/1.4907174
Subarna Mitra, Suvankar Chakraborty, Krishnakumar S. R. Menon, Study of anti-clockwise bipolar resistive switching in Ag/NiO/ITO heterojunction assembly Applied Physics A. ,vol. 115, pp. 1173- 1179 ,(2014) , 10.1007/S00339-013-8105-5
Sharif Md. Sadaf, El Mostafa Bourim, Xinjun Liu, Sakeb Hasan Choudhury, Dong-Wook Kim, Hyunsang Hwang, Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure Applied Physics Letters. ,vol. 100, pp. 113505- ,(2012) , 10.1063/1.3694016