Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion‐assisted deposition
作者： R. P. Netterfield , K.‐H. Müller , D. R. McKenzie , M. J. Goonan , P. J. Martin
DOI: 10.1063/1.340068
关键词: Breakdown voltage 、 Aluminium 、 Chemistry 、 Thin film 、 Nitride 、 Surface layer 、 Ellipsometry 、 Aluminium oxides 、 Ion beam 、 Analytical chemistry
摘要: Some aspects of the dynamics thin‐film synthesis aluminum nitride and oxide produced by ion‐assisted deposition have been deduced from in situ measurements ellipsometry, photometry, ion scattering spectroscopy. Measurements obtained during etching films nitrogen oxygen beams established thickness synthesized layer rate compound formation. these compared with a theoretical model which predicts time evolution surface as well steady‐state thickness. The breakdown voltage variation capacitance applied prepared are also presented. Furthermore, optical properties AlN Al2O3 visible region given.
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