High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness
作者： I.C Oliveira , K.G Grigorov , H.S Maciel , M Massi , C Otani
DOI: 10.1016/J.VACUUM.2004.04.001
关键词: Thin film 、 Substrate (electronics) 、 Sputter deposition 、 Indentation hardness 、 Materials science 、 Texture (crystalline) 、 Rutherford backscattering spectrometry 、 Sputtering 、 Layer (electronics) 、 Analytical chemistry
摘要: High quality thin aluminum nitride (AlN) films have been deposited onto a silicon (1 0 0) substrate by radio frequency magnetron sputtering of pure Al target using different gas (Ar, N2) mixtures. The depositions were carried out at temperatures varying from room temperature (plasma heating) up to 400 � C. crystalline structures investigated X-ray diffractometry (XRD) revealing pronounced texture the films. Some compounds buffer layer Al. film surface morphology was Atom Force Microscopy (AFM) (SPM-9500J3 Shimadzu Co), and found depend distinctively upon deposition conditions. Generally, two kinds found—a columnar one, which densely packed or organized in planar parallel sheets, flat structure, (typical for mono-crystals), with rms roughness below 0.2 nm. In this paper, influence argon added environment on properties is discussed. depth elemental distributions calculated 2.4 MeV 4 He + Rutherford Backscattering Spectrometry (RBS). Finally, mechanical characteristics described hardness tests.
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