Investigation of Mechanical and Structural Properties of AlN Thin Films Prepared by Mid-Frequency Pulsed Magnetron Sputtering
作者： Zong Xin Mu , Ai Min Wu , Li Jia , Zhen Wei Wang , Hua Yu Zhao
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.561-565.1185
关键词:
摘要: In this work, we investigated the deposition of AlN thin films on silicon (100) substrates by mid-frequency pulsed magnetron sputtering a metal Al target in an Ar-N2 gas mixture at room temperature. The were characterized various means for composition, crystal structure, surface morphology, and hardness Young’s modulus. AFM RMS (root mean square) roughness analysis revealed that morphology has relation with nitrogen flow rate Ar–N2 mixture. highest smoothness was observed 30-50%. phenomenon interpreted action vapor-solid interface film growth, as well nonequilibrium processes occurred growth.
sci-hub.se 参考文章(14)
I. Petrov, P. B. Barna, L. Hultman, J. E. Greene, Microstructural evolution during film growth Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 21, pp. S117- S128 ,(2003) , 10.1116/1.1601610
Yong Zoo You, Daeil Kim, Influence of incidence angle and distance on the structure of aluminium nitride films prepared by reactive magnetron sputtering Thin Solid Films. ,vol. 515, pp. 2860- 2863 ,(2007) , 10.1016/J.TSF.2006.08.014
Ravi Bathe, R.D Vispute, Dan Habersat, R.P Sharma, T Venkatesan, C.J Scozzie, Matt Ervin, B.R Geil, A.J Lelis, S.J Dikshit, R Bhattacharya, AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques Thin Solid Films. pp. 575- 580 ,(2001) , 10.1016/S0040-6090(01)01321-9
I.C Oliveira, K.G Grigorov, H.S Maciel, M Massi, C Otani, High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness Vacuum. ,vol. 75, pp. 331- 338 ,(2004) , 10.1016/J.VACUUM.2004.04.001
Q.X. Guo, M. Yoshitugu, T. Tanaka, M. Nishio, H. Ogawa, Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering Thin Solid Films. ,vol. 483, pp. 16- 20 ,(2005) , 10.1016/J.TSF.2004.12.014
K Kusaka, D Taniguchi, T Hanabusa, K Tominaga, Effect of input power on crystal orientation and residual stress in AlN film deposited by dc sputtering Vacuum. ,vol. 59, pp. 806- 813 ,(2000) , 10.1016/S0042-207X(00)00351-1
V. Brien, P. Pigeat, Microstructures diagram of magnetron sputtered AlN deposits: Amorphous and nanostructured films Journal of Crystal Growth. ,vol. 299, pp. 189- 194 ,(2007) , 10.1016/J.JCRYSGRO.2006.10.238
M.B. Assouar, O. Elmazria, L. Le Brizoual, P. Alnot, Reactive DC magnetron sputtering of aluminum nitride films for surface acoustic wave devices Diamond and Related Materials. ,vol. 11, pp. 413- 417 ,(2002) , 10.1016/S0925-9635(01)00708-7
Yuya Kajikawa, Suguru Noda, Hiroshi Komiyama, Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 21, pp. 1943- 1954 ,(2003) , 10.1116/1.1619414
J.P. Kar, G. Bose, S. Tuli, Correlation of electrical and morphological properties of sputtered aluminum nitride films with deposition temperature Current Applied Physics. ,vol. 6, pp. 873- 876 ,(2006) , 10.1016/J.CAP.2005.05.001