Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering
作者： Q.X. Guo , M. Yoshitugu , T. Tanaka , M. Nishio , H. Ogawa
DOI: 10.1016/J.TSF.2004.12.014
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摘要: Aluminum nitride (AlN) films were grown on sapphire substrates by radio frequency magnetron sputtering in plasma containing a mixture of argon and nitrogen, using pure aluminum target. Surface morphology dependence the AlN growth conditions such as substrate temperature nitrogen concentration was investigated. c-axis preferred wurtzite film with surface roughness small 2.9 nm obtained at 100 °C 20%. The increased increasing concentration. correlation between discussed.
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James H. Edgar, Inspec, Properties of group III nitrides INSPEC, the Institution of Electrical Engineers. ,(1994)
E. Calleja, M. A. Sánchez-Garcı́a, E. Monroy, F. J. Sánchez, E. Muñoz, A. Sanz-Hervás, C. Villar, M. Aguilar, GROWTH KINETICS AND MORPHOLOGY OF HIGH QUALITY ALN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY Journal of Applied Physics. ,vol. 82, pp. 4681- 4683 ,(1997) , 10.1063/1.366208
Qixin Guo, Mitsuhiro Nishio, Hiroshi Ogawa, Akira Yoshida, Temperature effect on the electronic structure of AlN Physical Review B. ,vol. 64, pp. 113105- ,(2001) , 10.1103/PHYSREVB.64.113105
S. Yoshida, S. Misawa, A. Itoh, Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation Applied Physics Letters. ,vol. 26, pp. 461- 462 ,(1975) , 10.1063/1.88210
Mizuho Morita, Norihiko Uesugi, Seiji Isogai, Kazuo Tsubouchi, Nobuo Mikoshiba, Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. ,vol. 20, pp. 17- 23 ,(1981) , 10.1143/JJAP.20.17
J. M. E. Harper, J. J. Cuomo, H. T. G. Hentzell, Quantitative ion beam process for the deposition of compound thin films Applied Physics Letters. ,vol. 43, pp. 547- 549 ,(1983) , 10.1063/1.94414
Cinzia Caliendo, Gigahertz-band electroacoustic devices based on AlN thick films sputtered on Al2O3 at low temperature Applied Physics Letters. ,vol. 83, pp. 4851- 4853 ,(2003) , 10.1063/1.1631739
Yuya Kajikawa, Suguru Noda, Hiroshi Komiyama, Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 21, pp. 1943- 1954 ,(2003) , 10.1116/1.1619414
Q.X. Guo, K. Yahata, T. Tanaka, M. Nishio, H. Ogawa, Low-temperature growth of aluminum nitride on sapphire substrates Journal of Crystal Growth. ,vol. 257, pp. 123- 128 ,(2003) , 10.1016/S0022-0248(03)01565-3
B.R. Natarajan, A.H. Eltoukhy, J.E. Greene, T.L. Barr, Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2 discharges Thin Solid Films. ,vol. 69, pp. 201- 216 ,(1980) , 10.1016/0040-6090(80)90037-1