Metal nanocrystals as charge storage nodes for nonvolatile memory devices
作者： P.H. Yeh , L.J. Chen , P.T. Liu , D.Y. Wang , T.C. Chang
DOI: 10.1016/J.ELECTACTA.2006.09.006
关键词:
摘要: The memory effects of the metal nanocrystals were found to be more pronounced than those semiconductor nanocrystals. Various as charge storage nodes are reviewed. have strong relationship with work function, and function can modulated by changing species. By tunneling dielectrics engineering, optimum IG Write/Erase/IG Retention ratio obtained.
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