Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

摘要: Abstract In this paper we report the morphology and microstructural properties of thick [111]-oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant substrate is designed to release stress developed in Si, due lattice mismatch different thermal expansion coefficients between Si. way it was possible have as 10 16 µm, with small bowing no cracks. Our study relies use an Electron Microscopy approach elucidates structure crystallographic defects across film, such stacking faults (SFs), nano-twins grain boundaries (GBs). After examination morphological structural characteristics micropillar array, analyzed thin deposit sidewalls, since may impact upper film. To assess crystal quality quantified SF density at surface, even estimating semi-quantitatively depletion SFs much larger thickness. Hence, regions where microcrystals neighboring micropillars coalesce form a continuous layer. We found that coalescence adjacent produces twinned regions, which terminate formation GBs. noticed annihilate GBs, leading reduction Finally, observe closure GBs inside thus improving its surface. work endorses grow good preliminary exploitation for high performing microelectronic devices.