Modeling and simulation of ion-sensitive field-effect transistor using TCAD methodology
作者： Neel Choksi , Dewanshu Sewake , Soumendu Sinha , Ravindra Mukhiya , Rishi Sharma
DOI: 10.1109/IEMENTECH.2017.8076935
关键词:
摘要: Ion Sensitive Field Effect Transistor (ISFET) is a popular potentiometric sensor which can be used for chemical and biochemical sensing. This paper presents the modeling of electrolyte-insulator-semiconductor structure ISFET using Silvaco TCAD tool. The electrolyte region along with reference electrode has been modeled as semiconductor suitable parameters calculated analytically. Silicon nitride sensing film it observed that sensitivity 57.143 mV/pH obtained pH application. effect different thicknesses also studied presented. It device reduces thickness increased.
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