A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces

作者: Andrea Bandiziol , Pierpaolo Palestri , Federico Pittino , David Esseni , Luca Selmi

DOI: 10.1109/TED.2015.2464251

关键词:

摘要: … ISFET oxide/electrolyte interface in TCAD, which were not addressed previously, but are the main contribution to the ISFET … the short-channel ISFETs featuring different gate dielectrics …

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