Analytical Model of pH sensing Characteristics of Junctionless Silicon on Insulator ISFET
作者： Rakhi Narang , Manoj Saxena , Mridula Gupta
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摘要: In this paper, an analytical model has been developed for junctionless silicon on insulator ion-sensitive FET pH sensing applications. The sensors detect the change of hydrogen ion concentration in aqueous solution. modeled results show good agreement with simulation obtained by using Sentaurus. electrolyte region considered changing appropriate intrinsic semiconductor material which electron and hole charges represent mobile ions effect surface potential, threshold voltage, drain current investigated through simulations. addition, impact different gate oxide materials, act as adhesion layer, investigated. response is defined amount voltage shift when (in injected solution) varied from lower to higher values. Effect thickness sensitivity also discussed paper.
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Ajay, Rakhi Narang, Manoj Saxena, Mridula Gupta, Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors Superlattices and Microstructures. ,vol. 85, pp. 557- 572 ,(2015) , 10.1016/J.SPMI.2015.04.040
Andrea Bandiziol, Pierpaolo Palestri, Federico Pittino, David Esseni, Luca Selmi, A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces IEEE Transactions on Electron Devices. ,vol. 62, pp. 3379- 3386 ,(2015) , 10.1109/TED.2015.2464251
Matti Kaisti, Qi Zhang, Alok Prabhu, Ari Lehmusvuori, Arifur Rahman, Kalle Levon, An Ion-Sensitive Floating Gate FET Model: Operating Principles and Electrofluidic Gating IEEE Transactions on Electron Devices. ,vol. 62, pp. 2628- 2635 ,(2015) , 10.1109/TED.2015.2441878
R.E.G. van Hal, J.C.T. Eijkel, P. Bergveld, A general model to describe the electrostatic potential at electrolyte oxide interfaces Advances in Colloid and Interface Science. ,vol. 69, pp. 31- 62 ,(1996) , 10.1016/S0001-8686(96)00307-7
F. Pittino, P. Palestri, P. Scarbolo, D. Esseni, L. Selmi, Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors Solid-state Electronics. ,vol. 98, pp. 63- 69 ,(2014) , 10.1016/J.SSE.2014.04.011
P Fromherz, A Offenhausser, T Vetter, J Weis, A neuron-silicon junction: a Retzius cell of the leech on an insulated-gate field-effect transistor. Science. ,vol. 252, pp. 1290- 1293 ,(1991) , 10.1126/SCIENCE.1925540
Hyun-June Jang, Won-Ju Cho, Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit Applied Physics Letters. ,vol. 100, pp. 073701- ,(2012) , 10.1063/1.3685497
Sergio Martinoia, Giuseppe Massobrio, Leandro Lorenzelli, Modeling ISFET microsensor and ISFET-based microsystems: a review Sensors and Actuators B-chemical. ,vol. 105, pp. 14- 27 ,(2005) , 10.1016/J.SNB.2004.02.046
Mohammadreza Sohbati, Christofer Toumazou, Dimension and Shape Effects on the ISFET Performance IEEE Sensors Journal. ,vol. 15, pp. 1670- 1679 ,(2015) , 10.1109/JSEN.2014.2365291
Jean-Pierre Colinge, Chi-Woo Lee, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Alexei N. Nazarov, Rodrigo T. Doria, Reduced electric field in junctionless transistors Applied Physics Letters. ,vol. 96, pp. 073510- ,(2010) , 10.1063/1.3299014