Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit
作者： Hyun-June Jang , Won-Ju Cho
DOI: 10.1063/1.3685497
关键词:
摘要: High-performance dual-gate (DG) ion-sensitive field-effect transistors (ISFETs) beyond the Nernstian limit of 59 mV/pH were realized using fully depleted (FD) silicon-on-insulator (SOI) substrate. The FD SOI-based DG ISFET exhibited a significantly enhanced pH sensitivity 379.2 mV/pH for operation amplified by capacitive coupling, while it relatively poor 47.9 mV/pH single-gate (SG) operation. Meanwhile, non-ideal effects long-term use slightly increased compared to SG Therefore, ISFETs compatible with complementary metal-oxide-semiconductor process are considered be very promising bio-chemical sensors.
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