Numerical simulation of ISFET structures for biosensing devices with TCAD tools

摘要: Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for fabrication biosensors (BioFETs). Aiming at optimization design and processes BioFETs, correlation between technological parameters device electrical response can be obtained by means an device-level simulation. In this work we present a numerical simulation approach to study ISFET bio-sensing devices (BioFET) using Synopsys Sentaurus Technology Computer-Aided Design (TCAD) tools. The properties custom-defined material were modified in order reproduce electrolyte behavior. particular, intrinsic semiconductor have been set solution. By replacing solution with semiconductor, electrostatic region therefore calculated solving equation within region. behaviour (transfer characteristics) general BioFET structure has simulated when captured target number increases from 1 10. I D current as function V DS voltage different positions single charged block values reference electrode calculated. potential distribution along electrolyte-insulator-semiconductor evaluated molar concentrations We presented Ion-Sensitive Transistor (ISFET) biosensing (BioFETs) A powerful framework biosensor devised, thus helping reducing technology development time cost. main finding analysis shows that there is no linear relationship charges modulation. Actually, strong position dependent effect: targets localized near source most effective respect drain general, even randomly distributed more efficient locally grouped on Moreover, hand, small positive biasing solution, providing transistor goes on, will result greater enhancement levels, still retaining good sensitivity but greatly simplifying operations real device.