作者: S.E Shafranjuk , I.P Nevirkovets , J.B Ketterson
DOI: 10.1016/S0038-1098(02)00040-6
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摘要: Abstract A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters setup may be chosen such a way that only two ABS are present; this agreement with our experimental data obtained using Nb/Al double-barrier junctions. In Hamiltonian, H , presented as ‘↑’ ‘↓’ spin states, while controlling physical (voltage across one barriers current) mapped to ‘magnetic fields’ B x n z . phase decoherence time estimated.