Possible manifestation of Andreev bound states in double-barrier Nb/Al/AlOx/Al/AlOx/Nb tunnel junctions
作者： I.P Nevirkovets , J.B Ketterson , S.E Shafranjuk , S Lomatch
DOI: 10.1016/S0375-9601(00)00263-2
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摘要: Abstract We have experimentally investigated electron transport in double-barrier Nb/Al/AlO x /Al/AlO /Nb devices. At low temperatures, the devices reveal a novel magnetic-field-sensitive subgap structure current-voltage characteristics, which is interpreted as manifestation of Andreev bound states. A correlation between phase-coherent and nonequilibrium properties suggested.
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