Semiconductor photo-detector
作者： Olga Klin , Philip Klipstein , Eliezer Weiss
DOI:
关键词:
摘要: A semiconductor device is disclosed, which includes: at least one layer being a crystallized for example including: superlattice and/or of group III-V materials; and passivation structure comprising or more layers wherein the grown in-situ in form on top layer, includes material having high density surface states forces pinning an equilibrium Fermi level within certain band gap away from its conduction valence bands.
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