作者: Chuanying Xi , Fengqi Song , Fucong Fei , Haijun Bu , Bo Chen
DOI: 10.1063/5.0015490
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摘要: Large unsaturated magnetoresistance (XMR) with magnitude ∼103% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated one hole pocket and two electron pockets the bulk, respectively, are detected Shubnikov-de Hass measurements, consistent first-principles calculations. With detailed Hall measurements performed, two-band model analysis exhibits an imperfect density ratio nh/ne ≈ 0.9 at T < 20 K, which suggests that carrier compensations account for XMR TaSe3.