作者: Yao Sun , Yule Xiong , Winnie N. Ye
DOI: 10.1109/JPHOT.2015.2511080
关键词:
摘要: We demonstrate the design and experimental results of a silicon-on insulator (SOI) polarization rotator based on asymmetric periodically loaded waveguides. The features compact device footprint 15.78 $\mu\mbox{m}$ , with measured rotation extinction ratio 11.8 dB at 1525 nm while maintaining least 6 ER over entire C-band. fabrication this is fully compatible standard complementary metal-oxide semiconductor (CMOS) process SiO2 top cladding. So far, most demonstration utilizing SOI However, sensitive to errors; thus, performance limited by current technology.