摘要: The quasistatic technique used to obtain MOS capacitance voltage characteristics and interface‐state density is finding increased use. While the basic has been described, it felt that a detailed description of apparatus setup measurement will prove useful. This allows rapid evaluation properties with accuracy about 1 × 1010 states/cm2 eV near midgap. Experimental considerations such as geometry, sweep rate, stray light, series resistance, their influence on resulting C‐V characteristic, are discussed.
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sci-hub.se 参考文章(2)
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