A simple method for measuring the interface state density
作者： Shigeru Nishimatsu , Mikio Ashikawa
DOI: 10.1063/1.1686820
关键词:
摘要: A simple method for measuring interface state density distribution of an MIS capacitor is proposed. The the expanded one which based on comparing a measured quasistatic C‐V curve to ideal characteristics. measurement can be achieved semiautomatically and simultaneously with capacitance by using analog systems. And rather time‐consuming computer calculation not necessary. completed apparatus measure in range 1010−3×1012/cm2· eV standard Al–SiO2–Si capacitors. It necessary precise determine accurately doping substrate insulator capacitance.
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M. Kuhn, A quasi-static technique for MOS C-V and surface state measurements Solid-State Electronics. ,vol. 13, pp. 873- 885 ,(1970) , 10.1016/0038-1101(70)90073-0
L.M. Terman, An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes Solid-State Electronics. ,vol. 5, pp. 285- 299 ,(1962) , 10.1016/0038-1101(62)90111-9
Sigurd Wagner, C. N. Berglund, A Simplified Graphical Evaluation of High‐Frequency and Quasistatic Capacitance‐Voltage Curves Review of Scientific Instruments. ,vol. 43, pp. 1775- 1777 ,(1972) , 10.1063/1.1685562
C.N. Berglund, Surface states at steam-grown silicon-silicon dioxide interfaces IEEE Transactions on Electron Devices. ,vol. 13, pp. 701- 705 ,(1966) , 10.1109/T-ED.1966.15827
P. L. Castro, B. E. Deal, Low‐Temperature Reduction of Fast Surface States Associated with Thermally Oxidized Silicon Journal of The Electrochemical Society. ,vol. 118, pp. 280- 286 ,(1971) , 10.1149/1.2408016
R.F. Pierret, T.L. Chiu, C.T. Sah, A slide rule for computing U F and the bulk doping from MIS-capacitor high-frequency C-V curves IEEE Transactions on Electron Devices. ,vol. 16, pp. 140- 147 ,(1969) , 10.1109/T-ED.1969.16576
E. A. Fogels, C. A. T. Salama, Characterization of Surface States at the Si ‐ SiO2 Interface Using the Quasi‐Static Technique Journal of The Electrochemical Society. ,vol. 118, pp. 2002- 2006 ,(1971) , 10.1149/1.2407895
M. Kuhn, E. H. Nicollian, Nonequilibrium Effects in Quasi-Static MOS Measurements Journal of The Electrochemical Society. ,vol. 118, pp. 370- 373 ,(1971) , 10.1149/1.2408053
A. D. Lopez, Using the Quasistatic Method for MOS Measurements Review of Scientific Instruments. ,vol. 44, pp. 200- 204 ,(1973) , 10.1063/1.1686081