The microwave properties of Ag(Ta0.8Nb0.2)O3 thick film interdigital capacitors on alumina substrates
作者： Ku-Tak Lee , Jung-Hyuk Koh
DOI: 10.3938/JKPS.60.276
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摘要: In this paper, we will introduce the microwave properties of Ag(Ta0.8Nb0.2)O3 thick film planar type interdigital capacitors fabricated on alumina substrates. The tailored paraelectric state Ag(Ta,Nb)O3 allows material to be regarded as a part family materials. As films formed in our experiment, exhibited extremely low dielectric loss with relatively high permittivity. This is very important issue for applications. Therefore, investigated capacitors. were prepared by screen-printing method substrates and sintered at 1140 °C 2 hrs. XRD analysis results showed that has perovskite structure. frequency dependent permittivity these have weak dispersions tangents range.
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