Characterization of BST Thin Films using MgO(100) Buffer Layer for Tunable Device

作者: Cheol-In Lee , Kyoung-Tae Kim , Chang-Il Kim

DOI: 10.4313/TEEM.2006.7.2.067

关键词:

摘要: In this paper, we have investigated the structure and dielectric properties of (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both morphology those were analyzed x-ray diffraction (XRD) atomic force microscope (AFM). For substrate, BST exhibited highly (100) orientation. The (100)-oriented showed high constant, tunability, figure merit (FOM). loss tunability annealed at deposited measured 10 kHz 515.9, 0.0082, 54.3%, respectively.

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