Structure and electrical properties of boron-added (Ba,Sr)TiO3 thin films fabricated by the sol-gel method

摘要: Abstract Thin films of BaxSr1−xTiO3 (BST, with x=0.5) were fabricated on a RuO2/Ru/SiO2/Si substrate by the spin coating multicomponent sol prepared using metal alkoxides. Boron alkoxide was intentionally introduced to establish better microstructure and reduce leakage current. AFM indicated that crack-free uniform having smooth surface gradually developed increasing boron content. The relative dielectric permittivity 250-nm thick BST thin fired at 700°C decreased content boron, from 420 for undoped film 190 10 mol% boron-added 1 MHz. This observation interpreted in terms serial capacitance composed perovskite grain interfacial B2O3 glassy phase low permittivity. current density (J) also amount added. applied voltage greater than V showed linear variation logJ E1/2 room temperature, suggesting interface-controlled Schottky emission dominant conduction process RuO2 electrode.