Chemically guided epitaxy of Rb-irradiated α-quartz
作者： S. Ga̧siorek , S. Dhar , K. P. Lieb , T. Sajavaara , J. Keinonen
DOI: 10.1063/1.1689733
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摘要: The solid-phase epitaxial regrowth of 175 keV Rb+-implanted α-quartz during thermal annealing in air or 18O2 was studied as a function the temperature (⩽1170 K) and implanted Rb fluence [(0.1–6)×1016 ions/cm2]. Rutherford backscattering channeling spectrometry used to characterize damage profiles. role oxygen exchange between gas SiO2 matrix highlighted by measuring 16O 18O profiles means time-of-flight elastic recoil detection analysis. Complete recrystallization amorphized layers observed after 1 h (at 1170 1130 K). rate follows two-step Arrhenius process, with activation energies 2.7±0.4 0.6±0.2 eV above below an 1070 K. three processes, namely, planar a-SiO2 layer, alkali ion out-diffusion, 16O⇔18O exchange, are highly correlated. This correlation is discussed h...
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