Dicing‐free SOI process based on wet release technology

摘要: A simple, low-cost and reliable dicing-free silicon-on-insulator (SOI) process is presented for solving three major challenges in manufacturing the microelectromechanical systems devices, i.e. stiction, notching dicing damage. In this process, cavity used patterned on handle layer to solve stiction problem, exposed oxide removed hydrofluoric acid (HF) solution before deep reactive ion etching (DRIE) structure eliminate effect's impact. The dies are attached temporally a designed frame by silicon dioxide. After removing using HF solution, separated from wafer cleanly without layout design rules front side backside patterns established. Furthermore, grooved carrier with specific was introduced enhance yield rate of process. Finally, tuning fork gyroscope fabricated demonstrate proposed fabrication over 81% achieved. solves damage problems only involving apparatus associated lithography DRIE, offering an economic complete SOI solution.