Interfacial Diffusion Studies of Cu ∕ ( 5 nm Ru ) ∕ Si Structures Physical Vapor Deposited vs Electrochemically Deposited Cu
作者： Tiruchirapalli N. Arunagiri , Yibin Zhang , Oliver Chyan , Moon J. Kim , Trace Q. Hurd
DOI: 10.1149/1.2039939
关键词:
摘要: In contrast to physical vapor deposition (PVD), the electrochemical (ECD) process is dependent upon substrate resistivity. ECD of Cu on ultrathin Ru diffusion barriers remains a technological challenge due large resistivity increase over wide plating area. Results are presented from comparative investigation interfacial stability and processes in PVD Cu/(5 nm Ru)/Si structures. can be conformally electroplated onto (5 surfaces (ca. 1 cm 2 ) with 94% efficiency. However, lesser uniformity conformality observed samples larger surface areas. The transmission electron microscopy (TEM) reveals that film less densely packed 70 nm) than Cu. HRTEM studies conjunction analyses using optical four-point probe measurements show 5 successfully impede up 300°C for 10 min, but fails at 450°C. Interfacial profiling data obtained back side secondary-ion mass spectrometry (SIMS) analysis agree TEM results. X-ray photoelectron spectroscopy (XPS) nitric acid-etched 20 shows presence residual after annealing, suggesting diffuses further into
harvard.edu
ecsdl.org参考文章(19)
Oliver Chyan, Tiruchirapalli N. Arunagiri, Thomas Ponnuswamy, Electrodeposition of Copper Thin Film on Ruthenium A Potential Diffusion Barrier for Cu Interconnects Journal of The Electrochemical Society. ,vol. 150, ,(2003) , 10.1149/1.1565138
D.K. Sarkar, Santanu Bera, S.V. Narasimhan, S. Chowdhury, Ajay Gupta, K.G.M. Nair, GIXRD and XPS investigation of silicidation in ion beam mixed system Solid State Communications. ,vol. 107, pp. 413- 416 ,(1998) , 10.1016/S0038-1098(98)00239-7
N. S. McIntyre, M. G. Cook, X-ray photoelectron studies on some oxides and hydroxides of cobalt, nickel, and copper Analytical Chemistry. ,vol. 47, pp. 2208- 2213 ,(1975) , 10.1021/AC60363A034
Yibin Zhang, Long Huang, Tiruchirapalli N. Arunagiri, Oscar Ojeda, Sarah Flores, Oliver Chyan, Robert M. Wallace, Underpotential deposition of copper on electrochemically prepared conductive ruthenium oxide surface Electrochemical and Solid State Letters. ,vol. 7, ,(2004) , 10.1149/1.1784051
T. Laurila, J. Molarius, J.K. Kivilahti, Interfacial reactions in the Si/TaC/Cu system Microelectronic Engineering. ,vol. 71, pp. 301- 309 ,(2004) , 10.1016/J.MEE.2004.02.002
A. Abbadie, S. Favier, C. Giroud, T. Billon, Investigation of Copper removal efficiency on reclaimed wafers with HF-based solutions Microelectronic Engineering. ,vol. 71, pp. 310- 320 ,(2004) , 10.1016/J.MEE.2004.02.003
Dong-Woon Shin, Shan X. Wang, Ann F. Marshall, Wataru Kimura, Chungli Dong, A. Augustsson, Jinghua Guo, Growth and characterization of copper nanoclusters embedded in SiC matrix Thin Solid Films. ,vol. 473, pp. 267- 271 ,(2005) , 10.1016/J.TSF.2004.07.079
T. N. Arunagiri, Y. Zhang, O. Chyan, M. El-Bouanani, M. J. Kim, K. H. Chen, C. T. Wu, L. C. Chen, 5 nm Ruthenium Thin Film as a Directly Plateable Copper Diffusion Barrier Applied Physics Letters. ,vol. 86, pp. 083104- ,(2005) , 10.1063/1.1867560
Woo-Jin Lee, Hyung-Soon Park, Development of novel process for Ru CMP using ceric ammonium nitrate (CAN)-containing nitric acid Applied Surface Science. ,vol. 228, pp. 410- 417 ,(2004) , 10.1016/J.APSUSC.2004.01.060
Oh-Kyum Kwon, Jae-Hoon Kim, Hyoung-Sang Park, Sang-Won Kang, Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer Journal of The Electrochemical Society. ,vol. 151, ,(2004) , 10.1149/1.1640633