Effect of Phosphorus and Carbon Incorporation in Amorphous Cobalt Films Prepared by Chemical Vapor Deposition

摘要: Thin (∼25 to 65 nm) films of amorphous cobalt-phosphorus alloys are grown on SiO 2 by chemical vapor deposition from dicobaltoctacarbonyl and trimethylphosphine at 250, 300, 350°C. Films incorporate C as an impurity, both carbidic graphitic C; Co P, however, do not form phosphide compounds, indicated X-ray photoelectron spectroscopy analysis. Both P influence film microstructure, neither significantly negatively impacts resistivity. Reduced temperatures minimize the amount incorporated but further lower Regardless temperature, show good thermal stability, maintaining their microstructures after a 3 h anneal 400°C. The serves reduce resistivity due in part decomposition cobalt carbides corresponding increase metallic Co.