Effect of surface roughness on EPES and AREPES measurements: Flat and crenels silicon surfaces
作者： S. Chelda , C. Robert-Goumet , B. Gruzza , L. Bideux , G. Monier
DOI: 10.1016/J.SUSC.2008.04.020
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摘要: Abstract EPES (elastic peak electron spectroscopy) and AREPES (angle resolved elastic are non destructive methods very sensitive to the surface region. These techniques allow measure percentage η e of elastically backscattered electrons from excited by an beam. Both combined with Monte-Carlo (MC) simulations interpret experimental results. In this work, we underline importance a micrometric scale roughness at surface. The use original method was fruitful for simulation, moreover 3D representations have been developed visualization qualitative interpretation For more precise quantitative study, 2D representation necessary. calculated results compared published ones got different incidence angles primary energies, on silicon having triangular saw-tooth aspect (crenels) obtained photolithography. We observed that effect due increases angle.
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