Temperature dependence of Hall effect in arsenic‐doped silicon at intermediate dopant density

摘要: Temperature dependence of Hall effect in arsenic‐doped silicon at intermediate dopant concentrations from 1.8×1017 to 2.5×1018 cm−3 and low compensation is investigated. Activation energies As Si experimental results are compared calculated values available literature for arsenic up 1×1018 . A critical density (∼5×1017 ) found, below which agree well with above the exceed experimentally determined energies. The discrepancy increases increasing density. phenomenon explained by delocalization D− states broadening band, also evident mobility results.