A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation

摘要: Building on Part I of this paper [Altermatt et al., J. Appl. Phys. 100, 113714 (2006)], the parametrization density states and incomplete ionization (ii) is extended to arsenic- boron-doped crystalline silicon. The amount ii significantly larger in Si:As than Si:P. Boron phosphorus cause a similar although boron energy level has distinctly different behavior as function dopant level. This so because ground state fourfold degenerate, while twofold degenerate. Finally, equations are derived that suitable for implementation device simulators. Simulations demonstrate increases current gain bipolar transistors by up 25% it decreases open-circuit voltage thin-film solar cells 10mV. simulation model therefore improves predictive capabilities modeling p‐n-junction devices.