An Improved Model for Analyzing Hole Mobility and Resistivity in p‐Type Silicon Doped with Boron, Gallium, and Indium
作者： L. C. Linares , S. S. Li
DOI: 10.1149/1.2127466
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摘要:
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ecsdl.org参考文章(1)
L. Marton, R. L. Sproull, Advances in Electronics and Electron Physics Physics Today. ,vol. 13, pp. 54- 55 ,(1960) , 10.1063/1.3056875