Measurement and theory of the Hall scattering factor and the conductivity mobility in ultra pure p-type silicon at low temperatures

摘要: Abstract : Acoustic phonon-limited conductivity and Hall mobilities for p-type silicon germanium have been calculated from solutions of the full Boltzmann equation without relaxation time approximation. These quantities measured as well in temperature range 20-50K. Using deformation potential scattering theory Tiersten we obtain necessary hole-acoustic phonon transition rates, with no adjustable parameters, a first principles input to transport equations. Excellent agreement is found both our experimental data on silicon. Calculated results were compared open literature similar mobility. The success this calculation due inclusion all three top valence bands, careful treatment matrix elements, use coefficients. Results confirm quantitative accuracy theory. (Author)