Large-Area n-Type PERT Solar Cells Featuring Rear p + Emitter Passivated by ALD Al 2 O 3

摘要: We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by stack of ALD Al2 O3 and PECVD SiO x . After illustrating the technological fundamental advantages such device architecture, we show that Al2O3/SiO employed to passivate is unaffected metallization processes can suppress Shockley–Read–Hall surface recombination current values below 2 fA/cm2, provided Al2O3 thickness larger than 7 nm. Efficiencies 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when /SiO passivation applied combination with homogeneous front-surface field (FSF). The developed herein sustain cell efficiencies excess 22% $V_{{\rm oc}}$ above 685 mV selective FSF implemented, despite absence contacts. Finally, demonstrate do not suffer from light-induced degradation.