作者: Xia Yan , Ning Chen , Firdaus Bin Suhaimi , Lin Zhang , Xinxin Gong
DOI: 10.1364/AO.58.0000E1
关键词:
摘要: Monocrystalline silicon-based, n-type front and back contact (nFAB) solar cells are gradually attracting more interest from the photovoltaic industry, due to their good bifaciality high efficiency potentials. To further improve conversion efficiency, nFAB need make better use of spectrum. Conventional single-layer SiNx antireflection coating (ARC) tends have a reflection loss for ultraviolet photons. Thus, in this work, we prepare double-layer ARC structure made SiNx/SiOx stack, deposited by plasma-enhanced chemical vapor deposition method. We investigate effects through simulation experimental studies fabricating bifacial cells. The results show that implementation helps greatly reduce short wavelength, thus allow improvement photocurrent up 0.3 mA/cm2. As result, average cell increases absolute ∼0.2%.