Characterization of iron in silicon by low-temperature photoluminescence and deep-level transient spectroscopy
作者： Minoru Nakamura , Susumu Murakami , Haruhiko Udono
DOI: 10.1063/1.5019958
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摘要: We investigate the relationship between intensity of band-edge (BDE) photoluminescence (PL) from 10 to 70 K and concentration iron diffused in boron-doped p-type silicon. Because nonradiative recombination activity interstitial iron-boron complex (FeiB center), BDE-PL at each temperature varies distinctively systematically with concentration, which means that this method has potential make accurate measurements a wide range concentrations The precipitates formed bulk and/or surface are found exert much weaker for excess carriers than FeiB center by exploiting both PL deep-level transient spectroscopy (DLTS) measurements. unexpected enhancement iron-diffused silicon 20 50 K is attributed passivation Si-oxide/Si interface iron. For samples trace amounts iron, within 20 μm significantly greater bulk, as measured DLTS. This result tentatively affinity Si-oxide.
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