The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs
作者： S.M. Khanna , C. Carlone , S. Halle , M. Parenteau , A. Beliveau
DOI: 10.1109/23.124087
关键词:
摘要: The spectral photoconductivity spectrum of lightly doped n GaAs exposed to electron and neutron irradiation is studied. From the temperature dependence photoconductivity, it deduced that induces a shallow donor level; photoluminescence experiments suggest its energy lies 31 meV below conduction band. Electron about factor 10 more effective than in reducing ratio PC(17)/PC
osti.gov
sci-hub.se 参考文章(11)
A. Goltzene, B. Meyer, C. Schwab, S. G. Greenbaum, R. J. Wagner, T. A. Kennedy, Electron paramagnetic resonance spectroscopy of fast neutron‐generated defects in GaAs Journal of Applied Physics. ,vol. 56, pp. 3394- 3398 ,(1984) , 10.1063/1.333904
L. W. Aukerman, P. W. Davis, R. D. Graft, T. S. Shilliday, Radiation Effects in GaAs Journal of Applied Physics. ,vol. 34, pp. 3590- 3599 ,(1963) , 10.1063/1.1729263
R. Coates, E.W.J. Mitchell, The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenide Advances in Physics. ,vol. 24, pp. 593- 644 ,(1975) , 10.1080/00018737500101471
C. M. Wolfe, G. E. Stillman, W. T. Lindley, Electron Mobility in High‐Purity GaAs Journal of Applied Physics. ,vol. 41, pp. 3088- 3091 ,(1970) , 10.1063/1.1659368
Alice L. Lin, Eric Omelianovski, Richard H. Bube, Photoelectronic properties of high‐resistivity GaAs : Cr Journal of Applied Physics. ,vol. 47, pp. 1852- 1858 ,(1976) , 10.1063/1.322904
H. C. Casey, D. D. Sell, K. W. Wecht, Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV Journal of Applied Physics. ,vol. 46, pp. 250- 257 ,(1975) , 10.1063/1.321330
W O Siyanbola, D W Palmer, Low temperature annealing of deep electron traps produced by proton irradiation of n-GaAs Semiconductor Science and Technology. ,vol. 5, pp. 7- 15 ,(1990) , 10.1088/0268-1242/5/1/002
Y. N. Mohapatra, V. Kumar, Temperature Dependence of Photocurrent in Undoped Semi‐Insulating Gallium Arsenide Physica Status Solidi (a). ,vol. 114, pp. 659- 663 ,(1989) , 10.1002/PSSA.2211140229
A. Goltzene, B. Meyer, C. Schwab, R. B. Beall, R. C. Newman, J. E. Whitehouse, J. Woodhead, Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs Journal of Applied Physics. ,vol. 57, pp. 5196- 5198 ,(1985) , 10.1063/1.335256
S. Loualiche, A. Nouailhat, G. Guillot, M. Lannoo, Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAs Physical Review B. ,vol. 30, pp. 5822- 5834 ,(1984) , 10.1103/PHYSREVB.30.5822