Low temperature annealing of deep electron traps produced by proton irradiation of n-GaAs

摘要: By reverse-bias capacitance-voltage measurements on Schottky diode samples the authors have determined immobile-charge concentrations N+ at 85 K and 120 n-type VPE GaAs, before after 1.0 MeV proton irradiation low temperature progressive heating to 300 K, so as study proton-irradiation-induced defects that anneal temperatures in this semiconductor obtain information their carrier-trapping energy levels. They find irradiation-induced decrease value is considerably removed, by a total of about 40%, three defect-annealing stages, A, B C, centred approximately 180, 235 280 respectively. The annealing kinetics stages C are consistent with those I II found Thommen (1970) studies resistivity changes electron-irradiated bulk n-GaAs. In contrast, they report stage A new lower than any previously known for gallium arsenide. consideration sensitivity measurement natures levels electron trapping deduce all predominantly due removal acceptor lie below Ec-0.2 eV. also close or middle energy-band gap. suggest may include produced displacement atoms.