Caractérisation des défauts produits dans GaAs irradié aux protons par analyse des transitoires thermiques et optiques de capacité
作者： G. Guillot , A. Nouailhat , G. Vincent , M. Baldy , A. Chantre
DOI: 10.1051/RPHYSAP:01980001503067900
关键词:
摘要: 2014 Thermal capacitive spectroscopy (DLTS, conductance) have been performed on n type Gallium Arsenide Schottky barrier structures irradiated at 300 K and 77 with one hundred keV protons dose of some 1011 p+/cm2. At K, the defects created are electron traps E2, E3, E4, E5 found after irradiation. Another defect (Ec 0.3 eV, 03C3na = 3 x 10-14 cm2) is moderate dose. a new trap 0.26 9 10-13 which anneals between 200 detected. The E2 E3 also low temperature Preliminary results concerning variations these thermal annealing stages described. We applied method DLOS (Deep Level Optical Spectroscopy) to determination optical capture cross section 03C30n(hv) allowed us precise lattice relaxation effect this centre. Revue Phys. Appl. 15 (1980) 679-686 MARS 1980, , Classification Physics Ahstracts 61.80Jh 71.55 78.50Ge
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