Effect of Annealing Temperature on the Luminescence Properties of Digital-Alloy InGaAlAs Multiple Quantum Wells
作者： Il Wook Cho , Hye Ryoung Byun , Mee-Yi Ryu , Jin Dong Song
DOI: 10.5757/JKVS.2013.22.6.321
关键词:
摘要: The effect of rapid thermal annealing (RTA) on the optical properties digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function RTA temperature. MQW samples were annealed from to for 30 s in nitrogen atmosphere. sample at exhibited strongest intensity narrowest FWHM (Full width half maximum), indicating reduced nonradiative recombination centers improved interfaces between wells barriers. showed decreased intensities blueshifted peaks compared -annealed sample. blueshift peak with increasing temperatures are ascribed increase aluminum due intermixing gallium (Ga) (Al) InGaAs/InAlAs short-period superlattices. decrease after attributed interface roughening lateral composition modulation caused interdiffusion Ga Al indium segregation, respectively. With temperature decay becomes slower, defect centers. can be significantly optimum conditions.
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