Design and Fabrication of 1.35- $\mu{\rm m}$ Laser Diodes With Full Digital-Alloy InGaAlAs MQW
作者： Duchang Heo , Jin Dong Song , Il Ki Han , Won Jun Choi , Yong Tak Lee
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摘要: We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs InGaAs/InAlAs (1.5 nm/0.375 nm) four (0.66 nm/0.98 nm). separate confinement layer consists two 60 makes for an optical factor 7.07%. obtained a continuous wave 200 mW from single cleaved facet 1.6-mm long broad area LDs, with 100-μm aperture width at 10°C, high characteristic temperature T0 70 K. In this paper, we find that, the MBE, technique bandgap engineering possible through entire LD structure only short-period superlattices pairs.
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